Chinese Optics Letters, 2005, 3 (0s): 62, Published Online: Mar. 5, 2007
Experimental study on the depth of electric field punching through into the absorption layer of APD 
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040.5570 Quantum detectors 040.3060 Infrared 040.3780 Low light level 040.5160 Photodetectors 230.5170 Photodiodes 270.5290 Photon statistics
Abstract
Dark-current-voltage curves and photon-current-voltage curves were measured by a passive quenched circuit so that the voltage applied to the avalanche photodiode can be much higher than breakdown voltage in study on the depth of punch through. The photo-current-voltage curve indicated clearly the punch-through voltage while the dark current-voltage curve is insensitive to the punch through. Furthermore, the avalanches initiated by the photo-generated carrier at a voltage lower than that from the thermo-generated carriers and explained based on the different distribution of the carriers.
Changjun Liao, Hua Lv, Xiaodong Peng, Jianping Guo, Zhengjun Wei, Jinyun Zhou, Jinyuan Feng, Songhao Liu. Experimental study on the depth of electric field punching through into the absorption layer of APD[J]. Chinese Optics Letters, 2005, 3(0s): 62.
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