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Experimental spectra study of Tm:GdVO4 microchip laser at room temperature

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Abstract

A high efficient diode-pumped Tm:GdVO4 microchip laser is demonstrated. Output power of 310 mW at 1917 nm with slope efficiency of 22% is produced when pumped by 2 W of power at 802 nm. Unpolarized fluorescence spectra near 1800 nm pumped by laser diode are measured. In addition, the most important upconversion fluorescence from 1D2 to 3F4 and 3H6 levels is discussed.

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收稿日期:2006-12-08

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李玉峰:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
Yufeng Li:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
鞠有伦:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
Youlun Ju:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
Y. Urata:Megaopto Co. Ltd., 11-58-307 Honcho, Wako, Saitama 351-0114, Japan
Y. Urata:Megaopto Co. Ltd., 11-58-307 Honcho, Wako, Saitama 351-0114, Japan
王月珠:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001
Yuezhu Wang:National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001

备注:Y. Li's e-mail address is lyf18@163.com.

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