Chinese Optics Letters, 2007, 5 (6): 358, Published Online: Jun. 30, 2007
Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD
异质外延 低温InP缓冲层 GaAs In0.53Ga0.47As 异变p-i-n光探测器 230.5160 Photodetectors 250.3140 Integrated optoelectronic circuits 310.1860 Deposition and fabrication
Abstract
Top-illuminated metamorphic In0.53Ga0.47As p-i-n photodetectors are grown on the ultrathin low-temperature InP buffered GaAs substrates. Photodetectors with the 300-nm-thick In0.53Ga0.47As absorption layer show a typical responsivity of 0.12 A/W to 1.55-micron optical radiation, corresponding to an external quantum efficiency of 9.6%. Photodetectors with the active area of 50*50 (microns) exhibit the -3 dB bandwidth up to 6 GHz. These results are very encouraging for the application of this metamorphic technology to opto-electronic integrated circuit (OEIC) devices.
Qi Wang. Metamorphic In0.53Ga0.47As p-i-n photodetector grown on GaAs substrates by low-pressure MOCVD[J]. Chinese Optics Letters, 2007, 5(6): 358.