Chinese Optics Letters, 2007, 5 (s1): 143, Published Online: Jul. 15, 2007
AlInGaAs/AlGaAs/GaAs strained quantum well lasers with high characteristic temperature Download: 707次
140.0140 Lasers and laser optics 220.0220 Optical design and fabrication 230.0230 Optical devices 250.0250 Optoelectronics
Abstract
The correlation between the gain material and the factors affecting characteristic temperature in high-power semiconductor lasers is comprehensively considered, and the AlInGaAs is adopted as the active area material. The AlInGaAs/AlGaAs/GaAs strained quantum well laser is designed and the whole structure of the device is given. Its highest operation temperature is 100 Celsius degrees and the characteristic temperature is up to about 200 K when the temperature is within 20-40 Celsius degrees. The output power is over 1 W at room temperature, and the lowest threshold current density is 126 A/cm2.
Yuxia Wang, Chunling Liu, Jilong Tang, Baoxue Bo, Guojun Liu. AlInGaAs/AlGaAs/GaAs strained quantum well lasers with high characteristic temperature[J]. Chinese Optics Letters, 2007, 5(s1): 143.