Chinese Journal of Lasers B, 1995, 4 (4): 289, 网络出版: 2007-08-17
High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy
High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy
摘要
Abstract
The structure design, MBE growth and fabrication of high performance AlGaAs separate confinement single quantum well lasers with low transverse beam divergence,θ⊥ of 30°, are reported. An average threshold current density of 300A/cm2 was obtained forascleaved 100 × 800μm2 laser devices. The measured internal quantum efficiency and intrinsicmode loss were 92% and 3cm-1, respectively. A high slope efficiency of 1. 3W/A for coatedlaser device was also demonstrated.
YANG Guowen, XIAO Jianwei, XU Zuntu, XU Junying, ZHANG Jingming, CHEN Lianghui, WANG Qiming. High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy[J]. Chinese Journal of Lasers B, 1995, 4(4): 289. YANG Guowen, XIAO Jianwei, XU Zuntu, XU Junying, ZHANG Jingming, CHEN Lianghui, WANG Qiming. High Performance AlGaAs Quantum Well Lasers with Low Beam Divergence Grown by Molecular Beam Epitaxy[J]. 中国激光(英文版), 1995, 4(4): 289.
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