采用双曲型的渐变函数,同时考虑加偏压时引起的阴极表面空间电荷区的变化,对场助InP/TnGaAsP/InP半导体光电阴极异质结的能带结构进行了详细的分析和计算,得到了在不同材料参数时,异质结能带结构的分布曲线.计算结果指出了达到理想的异质结传输效率时,发射层的厚度和掺杂浓度、吸收层的掺杂浓度、异质结界面处渐变区宽度以及场助偏压应满足的条件.它有助于场助半导体光电阴极的结构设计和材料参数的选择.

y using the hyperbolic grading function and taking account of the potential varies near the surface of photocathodes caused by an applied bias, the Conduction band structures at the heterojunction interface for a field-assisted InP/InGaAsP/InP Semiconductor photocathode are analysed and calculated in this paper. The profile curves of conduction band structure at the heterojunction interface with the different parameters of materials have been obtained. In order to achieve the perfect transmission efficiency at heterojunction, the calculation resultes have shown the conditions for the thickness and the doping concentrotion of the emission layer, the doping concentrotion of the absorption layer, as well as the grading width at the heterojunction interface and the applied bias. The results are helpful to designing field-assisted semiconductor photocachode and choosing material parameters.