Frontiers of Optoelectronics, 2014, 7 (1): 37, 网络出版: 2014-07-10
Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices
Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices
摘要
Abstract
Copper tin sulfide (Cu2SnS3) was a potential earth abundant absorber material for photovoltaic device application. In this contribution, triclinic Cu2SnS3 film with phase pure composition and large grain size was fabricated from a hydrazine solution process using Cu, Sn and S as the precursors. Absorption measurement revealed this Cu2SnS3 film had a direct optical band gap of 0.88 eV, and Hall effect measurement indicated the film was p-type with hole mobility of 0.86 cm2/Vs. Finally Mo/Cu2SnS3/CdS/ZnO/AZO/Au was produced and the best device efficiency achieved was 0.78%. Also, this device showed improved device performance during ambient storage. This study laid some foundation for the further improvement of Cu2SnS3 solar cell.
Jun HAN, Ying ZHOU, Yang Tian, Ziheng HUANG, Xiaohua WANG, Jie ZHONG, Zhe XIA, Bo YANG, Haisheng SONG, Jiang TANG. Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices[J]. Frontiers of Optoelectronics, 2014, 7(1): 37. Jun HAN, Ying ZHOU, Yang Tian, Ziheng HUANG, Xiaohua WANG, Jie ZHONG, Zhe XIA, Bo YANG, Haisheng SONG, Jiang TANG. Hydrazine processed Cu2SnS3 thin film and their application for photovoltaic devices[J]. Frontiers of Optoelectronics, 2014, 7(1): 37.
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