Chinese Optics Letters, 2007, 5 (10): 601, Published Online: Oct. 11, 2007
A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode 
Download： 511次
Abstract
Enhanced near-infrared (NIR) electroluminescence (EL) of a metal-oxide-semiconductor light emitting device (MOSLED) made on CO2 laser-annealed SiOx film is demonstrated. An EL power of near 50 nW from CO2 laser rapid-thermal-annealing (RTA) MOSLED under a biased voltage of 85 V and a current density of 2.3 mA/cm2 is preliminarily reported.
Chun-Jung Lin, Gong-Ru Lin. A CO2 laser rapid-thermal-annealing SiOx based metal-oxide-semiconductor light emitting diode[J]. Chinese Optics Letters, 2007, 5(10): 601.
PDF全文
