中国激光, 2007, 34 (11): 1589, 网络出版: 2007-11-12   

脉冲激光弯曲成形技术中硅片表面的形貌分析

Analysis of Silicon Surface Profile of Pulsed Laser Bending Processing
作者单位
大连理工大学精密与特种加工教育部重点实验室, 辽宁 大连 116024
摘要
对长脉宽脉冲激光弯曲后的硅片试件进行了表面形貌以及晶相等特性分析。结果表明,激光作用于硅片表面后形成了三种特殊区域,分别为边缘区域、过渡区域、主作用区域。其中过渡区域和主作用区域变化比较明显,分别出现了堆积层错现象和波纹状形貌。对主作用区域进行拉曼光谱检测,分析谱图没有发现典型的非晶硅转变,只是存在微弱的Si-Ⅰ→Si-Ⅲ转化。利用X射线定向仪检测原始和激光作用后表面的晶向,发现激光作用区域晶向变化较明显,存在晶体畸变和晶粒细化现象。
Abstract
Surface properties such as profile and crystal phase of bent silicon samples by long laser pulses were analyzed. The results indicated that the irradiated surface was divided into ambient region, transition region and main function region. The surfaces of the transition region and main function region were changed seriously, and massing stacking fault and ripple profile were found respectively. The typical transformation of amorphous silicon was not found at Raman spectrum of the main function region, and only existed tiny Si-Ⅰ→Si-Ⅲ conversion. Meanwhile the crystal-plane orientation was changed seriously compared to the initial crystal-plane by X-ray crystal-plane identification, and crystal distortion and thinning appeared in the region irradiated.

吴东江, 马广义, 曹先锁, 王续跃, 赵福令, 郭东明. 脉冲激光弯曲成形技术中硅片表面的形貌分析[J]. 中国激光, 2007, 34(11): 1589. 吴东江, 马广义, 曹先锁, 王续跃, 赵福令, 郭东明. Analysis of Silicon Surface Profile of Pulsed Laser Bending Processing[J]. Chinese Journal of Lasers, 2007, 34(11): 1589.

本文已被 11 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!