Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

Gong-Ru Lin

Chinese Optics Letters, 2007, 5 (11): 671, Published Online: Nov. 14, 2007

Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids Download： 594次

Gong-Ru Lin

Author Affiliations

Graduate Institute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan University, Taipei 106

光电子学纳米微晶电致发光 MOS金属氧化物 250.5230 Photoluminescence 160.2540 Fluorescent and luminescent materials

Abstract

The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxide-semiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

PDF全文

Gong-Ru Lin. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids[J]. Chinese Optics Letters, 2007, 5(11): 671.