结合单晶硅各向异性腐蚀和倾斜光刻技术,在14°斜切(110)单晶硅片上成功制作出90°顶角的中阶梯光栅。在1500~1600 nm波段对其进行了闪耀级次衍射效率测量，测量结果的趋势与C方法计算结果基本吻合，其中在1500~1550 nm波段光栅表现出良好的闪耀特性，效率为理论值的52%~75%，峰值约为58%。讨论并计算了制作工艺中的槽深误差对光栅闪耀级次衍射效率的影响。结果表明，在1500~1550 nm波段，考虑槽深误差计算所得的理论闪耀级次衍射效率约为完美槽形计算效率的77%~85%。

Echelle gratings with 90° apex angle have been successfully fabricated on 14° off-cut (110) silicon wafer by combining silicon anisotropic etch technique with inclined photolithography. The diffraction efficiency of blazed orders is measured in a wavelength region of 1500~1600 nm. The measurement results agree with theoretical results based on the C method. The grating has a strong blazing effect at wavelengths from 1500 nm to 1550 nm. The measured diffraction efficiency is about 52%~75% of theoretical value, thereinto, the peak efficiency is about 58%. At last, we discuss and calculate the diffraction efficiency of grating blazed orders caused by groove depth error in the production process. The results show that theoretical diffraction efficiency of blazed orders in consideration of groove depth error is about 77%~85% of perfect groove efficiency at wavelengths from 1500 nm to 1550 nm.