介绍了4H-SiC材料用于高温、低电平紫外光电检测的优点,回顾总结了近年来4H-SiC基紫外 光电探测器的研究进展,分析了改善4H-SiC基紫外光电探测器性能参数如降低暗电流、提高光电响应 度等可采用的各种技术手段,探讨了4H-SiC基紫外光电探测器的发展趋势。

Advances in 4H silicon carbide (4H-SiC) as a potential material for low-level ultraviolet (UV) radiation detection application at high-temperature, radiation hardened conditions are introduced. The latest progress in development of and the current state-of-art of different types of 4H-SiC-based UV photodetectors are reviewed. The approaches to improve the performances of the 4H-SiC-based photodetectors such as reducing the dark current and enhancing the photo responsivity are presented. The outlook for the development of 4H-SiC-based UV photodetectors are discussed.