量子电子学报, 2007, 24 (5): 0625, 网络出版: 2010-06-13
532nm连续激光对砷化镓材料损伤的研究
532 nm CW laser induced damage of GaAs materials
激光技术 激光损伤阈值 夫琅和费衍射 砷化镓材料 532 nm连续激光 热传导 laser techniaues laser induced damage threshold Fraunhofer diffraction GaAsmaterials 532 nm CW laser heat conduction
摘要
利用532nm连续激光对掺Si的n型砷化镓材料进行作用,材料的晶轴方向为〈100〉偏〈111A〉方向15°。实验观察到,连续激光与材料相互作用过程中,材料作用表面的反射光在观察屏上形成环状结构,认为是由夫琅和费衍射产生的,并首次提出将衍射作为探测材料损伤的方法。实验测得砷化镓的阈值损伤功率密度为2.56×105W/cm2。利用温度场的热传导方程计算获得材料的损伤阈值时间与入射光功率密度的关系曲线,并与实验曲线进行了比较。
Abstract
An experiment was designed to study 532 nm CW laser radiation on Si-doped n-type GaAs materials. The crystal axis of GaAs is 〈100〉 leaning to 〈111A〉 15°. As the laser irradiated on the materials,a diffraction-like phenomenon was observed. It was considered as the Fraunhofer diffraction formed by the reflected light from the material surface,and diffraction was developed as a new detecting method of the damage threshold for the first time. A damage threshold power density of GaAs materials,2.56 ×105 W/cm2,was tested experimentally. The heat conduction equation was used to describe the interaction process,and the experimental and theoretical curves of the incident laser power density versus damage threshold time of GaAs were obtained.
李永富, 祁海峰, 王青圃, 张行愚, 刘泽金, 王玉荣, 魏爱俭, 夏伟, 张飒飒. 532nm连续激光对砷化镓材料损伤的研究[J]. 量子电子学报, 2007, 24(5): 0625. LI Yong-fu, QI Hai-feng, WANG Qing-pu, ZHANG Xing-yu, LIU Ze-jin, WANG Yu-rong, Wei Aijian, XIA Wei, ZHANG Sa-sa. 532 nm CW laser induced damage of GaAs materials[J]. Chinese Journal of Quantum Electronics, 2007, 24(5): 0625.