Chinese Optics Letters, 2008, 6 (10): 727, Published Online: Dec. 4, 2008  

Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper Download: 716次

Author Affiliations
Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48015, USA2 Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 2A7, Canada3 Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI 53706, USA
Abstract
Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self-organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (>1.3 \mum) Q D lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.

Jun Yang, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, Zhenqiang Ma. Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper[J]. Chinese Optics Letters, 2008, 6(10): 727.

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