Chinese Optics Letters, 2008, 6 (10): 727, Published Online: Dec. 4, 2008
Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper Download: 716次
半导体激光器 集成光学 集成光电器件 量子阱 量子点 140.5960 Semiconductor lasers 250.3140 Integrated optoelectronic circuits 230.5590 Quantum-well, -wire and -dot devices
Abstract
Chip-scale integration of optoelectronic devices such as lasers, waveguides, and modulators on silicon is prevailing as a promising approach to realize future ultrahigh speed optical interconnects. We review recent progress of the direct epitaxy and fabrication of quantum dot (QD) lasers and integrated guided-wave devices on silicon. This approach involves the development of molecular beam epitaxial growth of self-organized QD lasers directly on silicon substrates and their monolithic integration with amorphous silicon waveguides and quantum well electroabsorption modulators. Additionally, we report a preliminary study of long-wavelength (>1.3 \mum) Q D lasers grown on silicon and integrated crystalline silicon waveguides using membrane transfer technology.
Jun Yang, Pallab Bhattacharya, Zetian Mi, Guoxuan Qin, Zhenqiang Ma. Quantum dot lasers and integrated optoelectronics on silicon platform Invited Paper[J]. Chinese Optics Letters, 2008, 6(10): 727.