为了探究氩气流量对含氢类金刚石薄膜(a-C:H)性能的影响规律，采用射频等离子体增强化学气相沉积（RFPECVD）技术，以正丁烷（C4H10）为反应物，在硅基底上沉积含氢类金刚石薄膜，通过改变氩气的流量分析氩气含量对含氢类金刚石薄膜性能的影响。红外光谱、表面粗糙度、硬度及热稳定性的测试表明，随着氩气流量的增加，降低了氢在类金刚石薄膜中的相对含量，在一定程度上增加了薄膜表面粗糙度，表面粗糙度由Ra= 3.732 nm 增加到Ra=8.628 nm，降低了薄膜的硬度，薄膜的硬度由23 GPa 降低到20 GPa，对类金刚石薄膜的热稳定性几乎无影响，但薄膜的应力从-1.8 GPa 降低到-1.1 GPa。

In order to explore the effect of the flow rate of Ar on the properties of diamond-like carbon (DLC) films. The DLC (a- C:H) films are prepared on Si substrate by RF- PECVD technology with n- butane(C4H10) as the reactant, the effect of Ar on the properties of DLC films is studied by changing the flow rate of Ar. Determination of Fourier transform infrared spectroscopy, hardness, thermal stability and roughness of the surface demonstrates that the relative content of H in the DLC and the hardness of DLC films decrease with the increase of the flow rate of Ar, the hardness decreases from 23 GPa to 20 GPa, and the roughness of the surface increases from Ra= 3.732 nm to Ra= 8.628 nm, the flow rate of Ar almost has no effect on the thermal stability of DLC films, but the stress decreases from -1.8 GPa to -1.1 GPa.