光学学报, 2014, 34 (s1): s104001, 网络出版: 2014-08-18
金属-半导体-金属结构AlGaN/GaN异质结紫外探测器技术及特性
Technology and Performance of Metal-Semiconductor-Metal AlGaN/GaN Heterostructure Ultraviolet Photodetector
探测器 紫外 金属-半导体-金属 光电探测器 detectors ultraviolet AlGaN/GaN AlGaN/GaN metal-semiconductor-metal photodetector
摘要
制备了金属-半导体-金属(MSM)结构的AlGaN/GaN异质结紫外探测器,探测器采用Ni/Au金属作为电极。实验研究了探测器的光电响应特性和I-V特性。此探测器具有两个光谱响应范围,光谱响应的峰值响应率分别为288 nm处0.717 A/W 和366 nm处0.641 A/W,峰值处的量子效率分别为288 nm处308% 和366 nm处217%。
Abstract
AlGaN/GaN heterostructure metal-semiconductor-metal (MSM) structure ultraviolet (UV) photodetector with Ni/Au electrodes is fabricated. Opto-electrical characteristics and current-voltage characteristics of the detector are investigated. It is found that the detector has two spectral response ranges. The peak response is 0.717 A/W at 288 nm and 0.641 A/W at 366 nm. The quantum efficiency is 308% at 288 nm and 217% at 366 nm.
杨乐臣, 付凯, 史学舜, 陈坤峰, 李立功, 张宝顺. 金属-半导体-金属结构AlGaN/GaN异质结紫外探测器技术及特性[J]. 光学学报, 2014, 34(s1): s104001. Yang Lechen, Fu Kai, Shi Xueshun, Chen Kunfeng, Li Ligong, Zhang Baoshun. Technology and Performance of Metal-Semiconductor-Metal AlGaN/GaN Heterostructure Ultraviolet Photodetector[J]. Acta Optica Sinica, 2014, 34(s1): s104001.