用化学气相淀积(CVD)的方法, 在6H-SiC衬底上同质外延生长SiC层, 继而外延生长了Si1-yCy合金薄膜, 用X射线衍射(XRD)、扫描电子显微镜(SEM)、拉曼散射等方法对所得的样品进行了表征测量, 着重研究了生长得到的Si1-yCy合金的晶体结构。SEM结果显示6H-SiC外延层上生长的Si1-yCy合金薄膜表面平整, 晶粒大小均匀; XRD衍射谱仅显示单一的特征衍射峰(2θ约为28.5°), 表明得到的合金薄膜晶体取向单一, 其晶体类型为4H型; 粗略估算, 合金薄膜中C含量约为3.7%。拉曼谱显示：随生长气源中的C/Si比的增加, Si1-yCy合金薄膜中替位式C含量逐渐增大, 当C/Si比达到一定值时, 合金薄膜中有间隙式C出现, 造成晶体缺陷, Si1-yCy合金薄膜晶体质量下降。

Si1-yCyalloy has been deposited on SiC homoepitaxial layer acquired by chemical vapor deposition method on 6H-SiC substrates. X-ray diffraction, scanning electron microscopy, Ranman shift and other methods were applied to characterize the Si1-yCyalloy samples, and the crystal structure of Si1-yCyalloy is mainly focused on. The results are: The Si1-yCyalloy has good surface morphology and the XRD spectrum shows only a single characteristic diffraction peak ( 2θ≈28.5°), the crystal type is 4H;it′s roughly estimated that the carbon occupis about 3.7% of all. Raman spectrum shows as C/Si ratio increases, the partition of substitute C increases, and when C/Si increases to some extent, the unsubstitute C breaks the rythm structure of the alloy, and the quality of Si1-yCyalloy turns bad.