中国激光, 2009, 36 (5): 1118, 网络出版: 2009-05-22  

基于电吸收调制器的全光开关门模型和实验研究

Numerical Model and Experimental Study of All-Optical Gate Based on Electro-Absorption Modulator
作者单位
清华大学电子工程系,清华信息科学与技术国家实验室(筹), 集成光电子学国家联合重点实验室, 北京 100084
摘要
全光开关门是全光3R再生、全光解复用、全光逻辑门和全光波长变换的重要组成模块, 而基于电吸收调制器(EAM)的全光开关门具有偏振无关和码型效应小等优点。依据光生载流子的输运方程, 建立了体材料EAM中的交叉吸收调制(XAM)模型。通过该模型利用时域有限差分法, 研究了EAM在高功率超短光脉冲抽运作用下形成的开关门特性, 对不同EAM偏置电压、抽运光功率和脉冲宽度下的开关门进行了分析。同时, 进行了开关门特性与偏置电压大小和抽运脉冲功率之间关系的实验研究。实验结果与理论预期相符合。EAM光开关用于光3R再生, 使40 Gb/s残余色散或偏振模色散恶化信号得到再生。
Abstract
Optical gate based on electro-absorption modulator (EAM) now plays an important role in all-optical 3R regeneration, multiplexing, logic gates, and wavelength conversion for its polarization insensitivity and weak pattern effect. A novel numerical model on cross-absorption modulation (XAM) in bulk EAM is proposed. Using the finite-difference time-domain method, the optical gate in EAM is numerically calculated. And the influence of bias voltage, power and width of the pump pulse on the EAM gate is analyzed respectively. Related experiments concerning XAM is also conducted. Experimental results are in agreement with numerical calculation. Error-free 3R regeneration by an EAM as the reshaping optical gate is also performed for 40 Gb/s RZ signal that is degraded by residual dispersion or polarization mode dispersion.

俸彦鸣, 霍力, 杨彦甫, 娄采云. 基于电吸收调制器的全光开关门模型和实验研究[J]. 中国激光, 2009, 36(5): 1118. Feng Yanming, Huo Li, Yang Yanfu, Lou Caiyun. Numerical Model and Experimental Study of All-Optical Gate Based on Electro-Absorption Modulator[J]. Chinese Journal of Lasers, 2009, 36(5): 1118.

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