利用渐进稳定性分析的方法研究了小注入电流条件下反馈光注入半导体激光器的复合腔模(ECM)的稳定性, 并提出对应于所有的复合腔模在相空间内存在一个模式稳定区域, 复合腔模出现在该模式稳定区域内的概率远大于出现在该模式稳定区域外。通过求解复合腔模的鞍结分岔及霍普夫分岔边界条件并计算载流子浓度的庞加莱截图, 验证了模式稳定区域的存在。数值计算的半导体激光器载流子浓度的分岔图验证了在小注入电流条件下渐进分析的可靠性。

The dynamics of semiconductor laser subject to optical feedback was studied analytically by the means of asymptotic analysis method. The stabilities of external cavity modes (ECMs) were analyzed, and the bifurcation boundaries of the ECMs were obtained. The stable regions of the ECMs are proposed and verified by numerically calculating the Poincare section of semiconductor laser carrier density. The bifurcation diagram of semiconductor laser carrier density at different effective injection currents was numerically calculated and the first Hopf bifurcation boundary was agrees with the first Hopf bifurcation boundary calculated by the asymptotic method under the low injection current conditions.