中国激光, 2009, 36 (s1): 356, 网络出版: 2009-06-18
具有波长选择功能的单片集成Si基长波长光探测器
Monolithically Integrated Si-Based Wavelength-Selective Photodetector Operating at Long Wavelength
光电子学 光探测器 异质外延 波长选择 光电子集成 optoelectronics photodetector heteroepitaxy GaAs/Si GasA/Si wavelength selective optoelectronic integration
摘要
报道了一种Si基长波长、窄线宽光探测器。该探测器采用异质外延生长技术, 首先在Si衬底上生长高质量的GaAs基滤波器, 接着生长InP基PIN光探测结构。其中的GaAs/Si异质外延生长, 采用中间刻槽工序实现了高质量、无裂纹的GaAs基外延层。制备的集成器件, 在波长1573.2 nm处, 获得了1.1 nm的光谱线宽以及9%的量子效率, 其中吸收层厚度为300 nm。
Abstract
A monolithically integrated wavelength-selective photodetector operating at long wavelength was reported in this paper. The photodetector, which consists of an GaAs-based Fabry-Pérot filter and an InP-based p-i-n absorption structure, was grown on a Si substrate by heteroepitaxy technology. A crack-free and high-quality GaAs epilayer was obtained by using mid-patterned growth. The photodetector with a spectral linewidth of 1.1 nm (FWHM) and a quantum efficiency of 9.0% was demonstrated, and its absorption layer thickness is 300 nm.
黄辉, 任晓敏, 吕吉贺, 黄永清, 王琦, 蔡世伟. 具有波长选择功能的单片集成Si基长波长光探测器[J]. 中国激光, 2009, 36(s1): 356. Huang Hui, Ren Xiaomin, Lü Jihe, Huang Yongqing, Wang Qi, Cai Shiwei. Monolithically Integrated Si-Based Wavelength-Selective Photodetector Operating at Long Wavelength[J]. Chinese Journal of Lasers, 2009, 36(s1): 356.
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