光学学报, 2009, 29 (s1): 374, 网络出版: 2009-06-25  

台面结铟镓砷探测器中N型磷化铟欧姆接触研究

Study of the Ohmic Contacts of n-Type InP in InGaAs Mesa Detectors
作者单位
中国科学院上海技术物理所传感技术国家重点实验室, 上海 200083
摘要
台面铟镓砷(InGaAs)探测器制备工艺包括n型InP欧姆接触和较好可靠性的延伸电极。采用Cr/Au作为n型InP欧姆接触, 通过传输线模型和俄歇电子谱(AES)研究了Cr/Au与n型InP在不同退火条件下的欧姆接触和界面结构, 实验表明Cr/Au在未退火条件下与n型InP形成较好欧姆接触, 退火条件的引入导致Cr/Au与n型InP欧姆接触恶化, 其原因是离子束溅射沉积的Cr中含有的Cr2O3在退火过程中O扩散进入Au层。采用未退火的Cr/Au作为n型InP欧姆接触和延伸电极实现了台面InGaAs探测器制造工艺的简化。
Abstract
The fabrication process of InGaAs mesa detectors contains the ohmic contacts of n-InP and the stretched electrode with good reliability. Cr/Au as the contact material for the n-InP is reported. The transmission line method (TLM) is employed to research the ohmic contacts at different annealing condition and Auger energy spectra (AES) is employed to research interface between Cr/Au and n-InP at different annealing condition. The results show that the good ohmic contacts are obtained without annealing treatment, while the ohmic contacts are degraded after annealing. The presence of Cr2O3 in the Cr layer deposited with ion beam sputter causes oxygen out-diffusion into the Au layer at annealing condition. The fabrication process of InGaAs mesa detectors is simplified by using the unannealing Cr/Au as the ohmic contacts of n-InP and stretched electrode.

汪洋, 唐恒敬, 李雪, 龚海梅. 台面结铟镓砷探测器中N型磷化铟欧姆接触研究[J]. 光学学报, 2009, 29(s1): 374. Wang Yang, Tang Hengjing, Li Xue, Gong Haimei. Study of the Ohmic Contacts of n-Type InP in InGaAs Mesa Detectors[J]. Acta Optica Sinica, 2009, 29(s1): 374.

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