对埋沟电荷耦合器件(CCD)的势阱形成机理进行了描述。基于泊松方程求解, 通过计算埋沟CCD信号电子进入势阱后填充的耗尽区大小, 得出了埋沟CCD电荷处理量的计算公式, 同时得出了埋沟CCD所需的最佳驱动脉冲。分析计算了埋沟结深、衬底掺杂等对CCD最佳工作点及最大电荷处理量的影响。根据理论计算, 设计制作的6000元线阵CCD信号处理量达到了4643 e/μm2。

The mechanics of the potential well of buried channel charge coupled device (CCD) are described. By solving Poisson’s differential equations, a brief calculation of the optimum operating point and maximum charge capacity has been given. The effect factors such as the buried channel junction depth and substrate doping concentration on the CCD’s optimum operating point and maximum charge capacity are analysed. According to the theoretical calculation, the charge capacity of the 6000 pixel linear CCD designed by our group is 4643 e/μm2.