Chinese Optics Letters, 2009, 7 (9): 826, Published Online: Sep. 22, 2009
Dependency of photoluminescence from SiO<sub>2</sub> thin f ilms containing Si<sub>1-x</sub>Ge<sub>x</sub> quantum dots on Ge/Si doping ratio
Si1-xGex量子点 离子注入 缺陷发光 160.6000 Semiconductor materials 240.0310 Thin films 260.2510 Fluorescence 300.6250 Spectroscopy, condensed matter
Abstract
SiO<sub>2</sub> thin films containing Si<sub>1-x</sub>Ge<sub>x</sub> quantum dots (QDs) are prepared by ion implantation and annealing treatment. The photoluminescence (PL) and microstructural properties of thin films are investigated. The samples exhibit strong PL in the wavelength range of 400?470 nm and relatively weak PL peaks at 730 and 780 nm at room temperature. Blue shift is found for the 400-nm PL peak, and the intensity increases initially and then decreases with the increase of Ge-doping dose. We propose that the 400?470 nm PL band originates from multiple luminescence centers, and the 730- and 780-nm PL peaks are ascribed to the Si=O and GeO luminescence centers.
Kun Zhong, Zhisong Xiao, Guo’an Cheng, Xiangqian Cheng, Ruiting Zheng. Dependency of photoluminescence from SiO<sub>2</sub> thin f ilms containing Si<sub>1-x</sub>Ge<sub>x</sub> quantum dots on Ge/Si doping ratio[J]. Chinese Optics Letters, 2009, 7(9): 826.
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