激光与光电子学进展, 2009, 46 (9): 40, 网络出版: 2009-10-09
p型透明导电材料及器件应用研究进展
Frontier of P-Type Transparent Conductive Thin Films and Devices
摘要
基于透明器件广阔的应用前景，p型透明导电材料及器件应用成为该领域研究的热点，并在近年来取得了令人瞩目的进展。综述了p型ZnO基氧化物、p型含铜氧化物、p型硫族化合物等透明导电材料及其器件应用的研究现状，重点介绍了近年来出现的p型掺杂的新方法、新机制及新材料的性能，并指出了今后的发展趋势和研究重点。
Abstract
A frontier of transparent semiconductors is opening as a consequence of discovery of p-type transparent conductive thin films. The recent advancement of p-type transparent conductive materials of Zn-based oxide, Cu-based oxysulfides and related devices is reviewed. The new doping method, conductive mechanism, properties of the p-type transparent conductive materials are emphasized. And the foreground is also prospected.
王华, 冯湘, 许积文, 任明放, 杨玲. p型透明导电材料及器件应用研究进展[J]. 激光与光电子学进展, 2009, 46(9): 40. Wang Hua, Feng Xiang, Xu Jiwen, Ren Mingfang, Yang Ling. Frontier of P-Type Transparent Conductive Thin Films and Devices[J]. Laser & Optoelectronics Progress, 2009, 46(9): 40.
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