光学 精密工程, 2009, 17 (1): 8, 网络出版: 2009-10-09
808 nm和980 nm半导体激光迭阵波长耦合技术
808 nm and 980 nm high power laser diode stack with wavelength coupling
摘要
为提高半导体激光器输出光功率,可将多个半导体激光器输出光束耦合成一束激光直接输出或者由光纤耦合输出,以提高半导体激光源的亮度及光束质量。本文采用波长耦合技术进行激光合束,将两种不同波长的半导体激光束通过非相干技术经波长耦合器件耦合输出以实现大功率高效率输出。介绍了非相干耦合技术中波长耦合原理及关键技术,根据波长需要设计了耦合器件,并自行设计光学系统对光束进行扩束聚焦。实验将808 nm和980 nm两半导体激光迭阵光束通过上述技术进行合束, 最终实现了更高功率输出,耦合效率达70%,光斑大小为3 mm×3 mm,可满足将半导体激光器直接应用于熔覆、焊接等场合的要求。
Abstract
High-power laser diodes based on GaAs semiconductor bars are well established as reliable and highly efficient laser sources. As increasing applications of semiconductor lasers in the laser processing, the single laser diode optical power has not satisfied for the actual requirements. In this paper,the improving laser output methods to couple several diode laser beams into one beam or to couple laser beams by an optical fiber to output directly to improve the brightness were researched and the principle and key technique for wavelength coupling in inherent coupling were introduced. The wavelength coupling technology was used to couple two laser beams with wavelength of 808 nm and 980 nm together, the beam splitter cube and optical focusing lens were designed for the experiment.Experimental results show that the overall efficiency is about 70% and spot size about 3 mm×3 mm,which can satisfy the system application requirements for metal cladding and welding directly.
顾媛媛, 冯广智, 单肖楠, 邓鑫李, 尹红贺, 刘云, 秦莉, 王立军. 808 nm和980 nm半导体激光迭阵波长耦合技术[J]. 光学 精密工程, 2009, 17(1): 8. GU Yuan-yuan, FENG Guang-zhi, SHAN Xiao-nan, DENG Xin-li, YIN Hong-he1, LIU Yun, QIN Li, WANG Li-jun. 808 nm and 980 nm high power laser diode stack with wavelength coupling[J]. Optics and Precision Engineering, 2009, 17(1): 8.