根据高功率微波源相互作用腔结构,建立了一种双边二次电子倍增效应模型。采用概率统计和蒙特卡罗模拟方法,计算了敏感曲线和二次电子的时间演化规律,分析了射频场参数和结构参数对二次电子倍增效应的影响。结果表明:高频场比低频场更容易发生二次电子倍增效应;二次电子倍增效应的时间演化与射频场的大小和腔结构呈非单调关系,且电子掠入射时比正入射时的共振区域要大得多,这与理论分析的结果一致。

According to the interaction cavity structure of HPM,a two-surface multipactor discharge model was presented.Through the calculation of susceptibility curves and secondary electron evolution using statistical and Monte-Carlo simulation methods,the impacts of parameters of RF field and the cavity structure on multipactor discharge were analyzed.The results show that:the high-frequency field is more liable to multipactor than the low-frequency field is,the secondary electron evolution of multipactor is non-monotonic related to RF field intensity and cavity structure,and the resonant region at grazing incidence is much larger than that at normal incidence,which accords with theoretical analysis.