介绍了GaN基512×1元紫外长线列焦平面探测器组件的研制过程,并给出了器件的性能。利用金属有机化学气相沉积(MOCVD)方法生长的多层AlGaN外延材料,通过刻蚀、钝化、欧姆接触电极制备等工艺,制作了256×1的背照射AlGaN紫外探测芯片。并对该芯片进行了I-V特性、响应光谱等测试,得到芯片的暗电流Id为4.22×10^-12A、零压电阻R0为1.01×10¹⁰Ω,响应波段为305-365 nm,响应率约为0.12 A/W。该AlGaN探测芯片与电容反馈互阻抗放大器(CTIA)结构的读出电路互连成为一个256模块,两个256模块经过拼接、封装后制备出512×1元紫外长线列焦平面探测器组件。测量室温(300 K)时焦平面组件(实际524元)的响应,平均电压响应率为1.8×10⁸V/W,其盲元率为9.0%,响应不均匀性为17.8%,359 nm处的平均波段探测率为7×10¹⁰cm Hz^1/2W^-1。并对器件性能进行了分析。

The fabrication and characterization of GaN-based 512×1 ultraviolet linear photodetector are reported in this work. AlGaN multilayers are grown in wetel-organic chemical vapor deposition (MOCVD). Material etching,passivation,metal contact and other techniques are used in the manufacture of 256×1 back-illuminated AlGaN detector. The current-voltage (I-V) curve shows that current at zero bias is 4.22×10^-12A and resistance is 1.01×10¹⁰Ω. A flat band spectral response is achieved in the 305-365 nm. The detector displays an unbiased responsivity of 0.12 A/W at 359 nm. This detector is bonded to a readout circuit with capacitive feedback transimpedance amplifier (CTIA) structure. Two modules are put together to form 512 linear ultraviolet focal plane arrays (FPA). The FPA is measured in 300 K and achieved average voltage responsivity 1.8×10⁸ V/W,the blind rate 9.0% and the response nonuniformities 17.8%. The measurement of signal and noise led to a detectivity of 7×10¹⁰cmHz^1/2W^-1 at 359 nm.