衬底温度对CVD生长CdTe多晶薄膜导电性能有决定性影响，衬底温度高于560℃为p型，衬底温度愈高，空穴浓度愈大；低于520℃为n型，在一定温度范围内，衬底生长温度越低，电子浓度越大.采用CVD方法先在高温下生长p型CdTe膜，然后在较低温度下生长n型CdTe膜，首次研制了同质p-n结二极管.又采用在高温下先生长p-CdTe膜，然后在室温环境下暴露在空气中氧化，经数周后产生CdO和TeO2氧化层，再溅射ITO膜，制成n-ITO/i/p-CdTe异质结太阳能电池，与无氧化处理的n-ITO/p-CdTe比较，光电转换效率有明显提高.

Underlay temperature has an effect drastically on conductivity types in CdTe polycrystalline thin films by CVD method. At the underlay temperature of more than 560℃, the CdTe film is p-type, and at an underlay temperature of less than 520℃, the CdTe film is n-type. In some extent, underlay growth temperature is slower, electron strength is more bigger. Using CVD method, the p-type CdTe film is firstly grown at higher temperature and then the n-type CdTe film is grown at lower temperature to form CdTe homo-junction, the p-n diode is developed for the first time. In addition, a p-type CdTe film is deposited at higher temperature, then exposed to air at room temperature for several weeks to form CdO and TeO2 layer. ITO film is finally deposited on the oxide layer for forming n-ITO/i/p-CdTe hetero-junction. Compared to n-ITO/P-CdTe without oxide layer, the efficiency of EO conversion is significantly improved.