中国激光, 2015, 42 (8): 0806001, 网络出版: 2022-09-24   

Dy3+掺杂Ga-Sb-S玻璃的3~5 μm发光研究

3~5 μm Luminescence of Dy3+-Doped Ga-Sb-S Chalcogenide Glasses
作者单位
江苏省先进激光材料与器件重点实验室, 江苏师范大学物理与电子工程学院, 江苏 徐州 221116
摘要
制备了一系列Dy3+掺杂新型Ga-Sb-S 硫系玻璃,研究了玻璃的热稳定性(玻璃态稳定性)、光学性能、结构和中红外发光性能,通过组分微调改善了玻璃的抗析晶性能,拉制了高光学质量的光纤。结果表明,Dy3+掺杂Ga-Sb-S玻璃具有良好的热稳定性、优异的红外透光性和较低的声子能量,在2.95、3.59、4.17、4.40 μm 附近表现出较强的发光;少量As替代Sb可显著减弱光纤拉制过程中玻璃的析晶倾向,同时未对玻璃的发光产生显著影响。光谱分析结果显示,Dy3+在Ga-Sb-S 玻璃中的2.95 μm 和4.17 μm 荧光量子效率分别为88.1% 和75.9%,对应的受激发射截面分别为1.1×10-20 cm2和0.38×10-20 cm2。较高的量子效率和较大的受激发射截面使得Dy3+掺杂Ga-Sb-S玻璃成为极具潜力的中红外激光增益材料。
Abstract
Novel Ga-Sb-S chalcogenide glasses doped with Dy3 + ions are synthesized. Their thermal stability, optical property, structure and mid-infrared (MIR) emission property are studied. The glass thermal stability against crystallization is significantly improved by slightly adjusting the glass composition, and therefore the fibers with good optical quality are drawn. The Dy3 +-doped Ga-Sb-S glasses show good thermal stability, excellent infrared transparency, low phonon energy, and intense emissions around 2.95, 3.59, 4.17 and 4.40 μm. The substitution of a small amount of Sb with As reduces the crystallization tendency of the glass during the fiber drawing without making remarkable effects on the emission property. Spectral analyses indicate that the quantum efficiencies of the 2.95 mm and 4.17 mm emissions of Dy3 + ion in the Ga-Sb-S glass are 88.1% and 75.9%, respectively; and the respective stimulated emission cross sections are 1.1×10-20 cm2 and 0.38×10-20 cm2. The high quantum efficiencies and large stimulated emission cross sections of the MIR emissions in the Dy3 +- doped Ga-Sb-S glasses make them promising gain materials for the MIR lasers.

张鸣杰, 杨安平, 张斌, 任和, 郭威, 杨艳, 翟诚诚, 王雨伟, 杨志勇, 唐定远. Dy3+掺杂Ga-Sb-S玻璃的3~5 μm发光研究[J]. 中国激光, 2015, 42(8): 0806001. Zhang Mingjie, Yang Anping, Zhang Bin, Ren He, Guo Wei, Yang Yan, Zhai Chengcheng, Wang Yuwei, Yang Zhiyong, Tang Dingyuan. 3~5 μm Luminescence of Dy3+-Doped Ga-Sb-S Chalcogenide Glasses[J]. Chinese Journal of Lasers, 2015, 42(8): 0806001.

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