光学学报, 2010, 30 (1): 272, 网络出版: 2010-02-01  

缓冲层对LiB3O5晶体上1064 nm,532 nm倍频增透膜性能的影响

Influence of Buffer Layer on Performances of 1064 nm,532 nm Frequency-Doubled Antireflection Coating for LiB3O5
作者单位
1 辽宁大学 物理学院,辽宁 沈阳 110036
2 辽宁省光电子功能器件与检测技术重点实验室,辽宁 沈阳 110036
3 中国科学院 上海光学精密机械研究所 光学薄膜技术研发中心,上海 201800
摘要
采用电子束蒸发方法在LiB3O5(LBO)晶体上制备了无缓冲层和具有不同缓冲层的1064 nm,532 nm倍频增透膜。利用Lambda900分光光度计、MTS Nano Indenter纳米力学综合测试系统以及调Q脉冲激光装置对样品的光学性能、附着力和激光损伤阈值进行了测试分析。结果表明,所有样品在1064 nm和532 nm波长的剩余反射率都分别小于0.1%和0.2%。与无缓冲层样品相比,预镀Al2O3缓冲层的样品的附着力提高了43%,具有SiO2缓冲层的样品的附着力显著提高。激光损伤阈值分析表明,采用SiO2缓冲层改进了薄膜的抗激光损伤性能,但是Al2O3缓冲层的插入却导致薄膜的激光损伤阈值降低。
Abstract
1064 nm,532 nm frequency-doubled antireflection coating with out buffer layer or with different buffer layers were fabricated by using electron beam evaporation technique on LBO. The optical property,adhesion and laser-induced damage threshold (LIDT) were investigated by Lambda900 spectrometer,MTS nano Indenter and Q-switched pulsed laser,respectively. The results showed that the reflectance of all samples was below 0.1% and 0.2% at wavelength of 1064 nm and 532 nm,respectively. Comparing with the sample without buffer layer,the critical adhesion of the sample with buffer layer of Al2O3 was increased by 43% and that of the coating with buffer layer of SiO2 was improved significantly. LIDT of the coatings were improved by using buffer layer of SiO2 and that of the coating with buffer layer of Al2O3 was decreased.

谭天亚, 于撼江, 吴炜, 郭永新, 邵建达, 范正修. 缓冲层对LiB3O5晶体上1064 nm,532 nm倍频增透膜性能的影响[J]. 光学学报, 2010, 30(1): 272. Tan Tianya, Yu Hanjiang, Wu Wei, Guo Yongxin, Shao Jianda, Fan Zhengxiu. Influence of Buffer Layer on Performances of 1064 nm,532 nm Frequency-Doubled Antireflection Coating for LiB3O5[J]. Acta Optica Sinica, 2010, 30(1): 272.

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