针对微通道热沉封装的大功率无铝量子阱半导体激光阵列(LDA)建立三维有限元模型,模拟分析了热沉温度、工作电流以及占空比等工作条件对有源区温度的影响,并通过实验手段研究了不同工作条件下,大功率半导体激光阵列的输出特性的变化情况。结果表明,热沉温度越高、占空比越大时,器件达到稳态所需时间越长,有源区温度越高,中心波长红移越大;阈值电流越大,转换效率、斜率效率越低,输出功率越小。外推了半导体激光阵列在20 ℃热沉温度,20%高占空比,300 A高注入电流条件下工作的输出特性,得到输出功率超过300 W,转换效率达45%,且没有出现热饱和现象。

A three dimensional finite element thermal-model is presented for a micro-channel packaged high-power Al-free quantum-well laser diode array(LDA). The influence of working conditions,such as ambient temperature,operating current and duty cycle,on the temperature of the active region is simulated in this paper. And the variety of the output characteristics of LDA working under different conditions is studied experimentally. It is found that longer time to reach steady-state,higher temperature of the active region,greater red shift of peak wavelength and threshold current,lower conversion efficiency and slope efficiency and lower output power are gained when the laser diode array works at higher ambient temperature and duty cycle. The output characteristics of the laser diode array is extrapolated when it works under the conditions of 20 ℃ ambient temperature,20% duty-cycle and 300 A injecting current. The results show that the output power exceeds 300 W and the conversion efficiency achieves 45% and no thermal rollover appears.