为改善高功率垂直腔面发射半导体激光器的热特性,提高它的输出功率,研制了新型径向桥电极高功率垂直腔面发射半导体激光器器件.对新型半导体激光器的结构模型进行理论分析表明,采用径向桥式电极可以降低器件P型DBR电阻,减小焦耳热;降低热阻,提高器件的散热能力.实验制备了出光孔径同为200 μm的径向桥电极与常规电极的高功率垂直腔面发射半导体激光器,并对器件的性能进行了实验对比测试.结果表明径向桥电极高功率垂直腔面发射半导体激光器器件的微分电阻为0.43 Ω;室温下最大输出功率可达340 mW,是常规电极垂直腔面发射半导体激光器的1.7倍;器件的热阻为0.095 ℃/mW,在80 ℃时,仍能正常激射,具有良好的热特性,径向桥电极高功率垂直腔面发射半导体激光器的光电特性与温度特性要远好于常规电极的高功率垂直腔面发射半导体激光器器件.

The novel high-power vertical-cavity surface-emitting lasers(VCSEL) with radial bridge electrode is fabricated in order to improve the thermal characteristics and increase the out power of high power VCSEL.The analysis on the model of the high-power VCSEL shows the radial bridge electrode can reduce the electric and thermal resistance and the Joule heat of VCSEL.The radial brigde electrode and the conventional electrode high power VCSEL both with 200 μm aperture are made and tested comparatively.The testing results show that the differential resistance of the VCSEL is 0.43 Ω and the out power is 340 mW,1.7 times higher than the conventional device,which can operate at higher up to 80 ℃,and its thermal resistance is 0.95 ℃/mW.The temperature and opto-electric characteristics of radial bridge electrode high power VCSEL are much better than those of the conventional electrode high power VCSEL.