中国激光, 2010, 37 (4): 1104, 网络出版: 2010-04-20
HfO2薄膜的光致发光谱与激发谱
Photoluminescence and Photoluminescence Excitation of Hafnium Dioxide (HfO2) Thin Films
薄膜 氧化铪薄膜 光致发光与激发谱 X射线衍射 结构缺陷 激光损伤阈值 thin films hafnia thin films photoluminescence and photoluminescence excitation X-ray diffraction structure defect laser-induced damage threshold
摘要
利用电子束蒸发和自动晶控技术制备了氧化铪薄膜,并对薄膜进行了退火处理。通过光致发光(PL)光谱、光致发光激发谱(PLE)和X射线衍射(XRD)等测试对HfO2薄膜进行表征,研究了退火对HfO2薄膜结构及发光特性的影响。室温下对薄膜进行了光致发光光谱测试发现存在4个发射峰,退火后的样品发光强度明显增强。对薄膜的激发谱测试发现激发谱与发射谱之间存在着斯托克斯位移。在退火处理后,X射线衍射表明薄膜的取向性和结晶度都明显提高,但是薄膜的激光损伤阈值(LIDT)没有变化。
Abstract
The study was performed on hafnia thin films deposited with electron beam evaporation deposition before and after annealing. The transmittance,X-ray diffraction (XRD) and photoluminescence (PL) excitation spectrum of the samples were tested to analysis the property and structure of the film. Intensity of the photoluminescence increases after the annealing process. It is found that the Stokes shift is existed between excitation spectrum and emission spectrum. XRD shows that after annealing,the orientation and the crystalline are markedly improved. The annealing process has no effect upon the laser-induced damage threshold (LIDT).
王营, 赵元安, 贺洪波, 邵建达, 范正修. HfO2薄膜的光致发光谱与激发谱[J]. 中国激光, 2010, 37(4): 1104. Wang Ying, Zhao Yuan’an, He Hongbo, Shao Jianda, Fan Zhengxiu. Photoluminescence and Photoluminescence Excitation of Hafnium Dioxide (HfO2) Thin Films[J]. Chinese Journal of Lasers, 2010, 37(4): 1104.