针对微通道热沉封装半导体激光列阵(LDA)建立三维有限元热分析模型,对其在20%高占空比工作时的瞬态和稳态温度分布进行模拟分析。模拟结果表明加电流后的几十微秒内有源区温度缓慢上升,此后相邻发光单元之间发生热交叠,温度快速上升,最后由于热弛豫积累效应达到热平衡;稳态时有源区温度分布呈现与器件结构一致的周期性,各发光单元温度分布一致,温升集中在有源层电极区内,绝缘区温升快速减小,出光面温度较高,180 A电流下工作时沿腔长方向最大存在3 K的温差。试验测试不同电流下工作时的输出特性,得到器件的有源区温升及稳态热阻与模拟结果基本吻合。

A three-dimensional finite element thermal analysis model is presented for a micro-channel heat sink packaged semiconductor laser diode array(LDA). The transient and steady-state temperature distribution of the laser diode array is simulated when it works under the condition of 20% high duty cycle. It is found that the temperature of the active region rises slowly within the first few dozen microseconds after turning on current. And then,the temperature rises rapidly due to the heat flux interleaving between adjacent emitters,and finally a steady state is reached due to the thermal relaxation and accumulation effect. The static temperature distribution presents periodicity as the same of the array structure and no temperature difference exists among each emitter. The temperature rising concentrates in the electrode region of the active layer,and the temperature drops rapidly in the insulated region. The emitting facet has a higher temperature,and a max 3 K temperature difference exists along the cavity when the working current is 180 A. The output characteristic of the laser diode array is measured when it works under different currents. The temperature rising of the active region and the steady-state thermal resistance are basically coincident with the simulation.