利用直流磁控溅射法将SiSb薄膜沉积到聚碳酸酯光盘盘基上,利用相变光盘初始化仪分别在400,500,600,700,800和1200 mW的激光功率下将光盘初始化。比较了在不同激光功率下SiSb薄膜在300-800 nm波段的反射率变化情况。研究表明,随着初始化激光功率的提高,SiSb薄膜的反射率和反射率对比度逐渐增加。在400-800 nm波长范围内,SiSb薄膜在1200 mW激光初始化下高达30%-35%的反射率对比度,说明此相变薄膜是一种有前途的新型光存储材料。将沉积态与400,800和1200 mW初始化后的SiSb薄膜进行X射线衍射分析,研究表明,沉积态的SiSb为非晶态,激光初始化后的样品发生了不同程度的晶化,激光功率越高,晶化程度越高,晶化相为Sb的六方晶系菱形中心结构。

SiSb films are deposited on the polycarbonate optical discs by direct current magnetron sputtering technology. Discs with SiSb films are initialized at laser power 400,500,600,700,800,1200 mW,respectively,by phase change optical disc initializer. The transformation of reflectivity at wavelength from 300 nm to 800 nm of films initialized at different laser power is compared. The results illustrate that reflectivity and reflectivity contrast of SiSb films increase gradually with the enhancement of initializing laser power. Reflectivity contrast of the novel SiSb films initialized at laser power 1200 mW is as high as 30%-35%,which indicates novel SiSb phase change material is a promising material for optical data storage. X-ray diffraction is performed on the as-deposited SiSb films and those laser-initialized at laser power 400,800,1200 mW,respectively. The study shows that the as-deposited SiSb is amorphous state,crystallization to different extent in the samples initialized at different laser power takes place,and the higher the laser power is the higher the degree of crystallization in the samples. Crystallization phase of the samples is hexagonal rhomb-centered structure of antimony,which is similar to the structure of thermal annealing SiSb films reported by other papers.