光学学报, 2010, 30 (5): 1390, 网络出版: 2010-05-11
808 nm边发射二极管激光器特征温度
808 nm Edge-Emitting Diode Lasers Characteristic Temperatures
激光器 半导体激光器 边发射二极管激光器 特征温度 量子阱结构 功率电流特性 lasers semiconductor lasers edge-emitting diode lasers characteristic temperature quantum well structure P-I characteristic
摘要
研究了波导层材料为Al0.65Ga0.35As时的3种不同厚度(0.4,0.5和0.6 μm)和3种不同的AlGaAs基大光学腔(Al0.65Ga0.35As-1 μm,Al0.6Ga0.4As-1.5 μm和Al0.45Ga0.55As-2 μm)的808 nm边发射二极管激光器的输出特性。理论计算模拟了不同结构器件的功率电流特性(P-I)曲线,采用线性拟合的方法计算阈值电流,并计算了器件的特征温度。实验结果验证了理论计算结果。波导层厚度变化的研究说明,当单量子阱的厚度不变时,波导层越厚,器件的特征温度越高,器件的性能也就越好。大光学腔变化的研究表明,由于Al的组分x=0.45时会产生有效的垂直光斑尺寸和更低的电阻,使得2 μm-LOC结构的器件性能最好。
Abstract
Output characteristics of laser diodes (LDs) emitting at 808 nm with 3 different thicknesses of waveguide-layer made from Al0.65Ga0.35As (0.4,0.5 and 0.6 μm) and 3 different AlGaAs-based large optical cavities (LOC) (Al0.65Ga0.35As-1 μm,Al0.6Ga0.4As-1.5 μm and Al0.45Ga0.55As-2 μm) were studied. P-I curves of these different structures were simulated,threshold currents were computed by the means of linear fitting,and characteristic temperatures of these devices was calculated. The experimental results authenticated the theoretical calculation results. The research of different waveguide-layer thickness showed that when thickness of single quantum well was fixed,the thicker the waveguide layer was,the higher the characteristic temperature was,and the better the device performance. The study of different large optical cavity indicated LD with 2 μm-LOC was the best of those three as a result of an aluminum content of x=0.45 yielding an effective vertical spot size of 1.0 μm and a lower electrical resistance.
梁雪梅, 秦莉, 王烨, 杨晔, 李再金, 王超, 宁永强, 王立军. 808 nm边发射二极管激光器特征温度[J]. 光学学报, 2010, 30(5): 1390. Liang Xuemei, Qin Li, Wang Ye, Yang Ye, Li Zaijin, Wang Chao, Ning Yongqiang, Wang Lijun. 808 nm Edge-Emitting Diode Lasers Characteristic Temperatures[J]. Acta Optica Sinica, 2010, 30(5): 1390.