Chinese Optics Letters, 2010, 8 (5): 493, Published Online: May. 11, 2010
Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode Download: 628次
非对称宽波导分别限制结构 光场分布 808nm量子阱激光器 140.2020 Diode lasers 140.5960 Semiconductor lasers 230.5590 Quantum-well, -wire and -dot devices
Abstract
Asymmetric broad-waveguide separate-confinement heterostructure (BW-SCH) quantum well (QW) laser diode emitting at 808 nm is analyzed and designed theoretically. The dependence of the optical field distribution, vertical far-field angle, and internal loss on different thicknesses of the upper waveguide layer is calculated and analyzed. Calculated results show that when the thicknesses of the lower and upper waveguide layers are 0.45 and 0.3 \mu m, respectively, for the devices with 100-\mu m-wide stripe and 1000-\mu m-long cavity, an output power of 7.6 W at 8 A, a vertical far-field angle of 37°, a slope efficiency of 1.32 W/A, and a threshold current of 189 mA can be obtained.
Peixu Li, Kai Jiang, Shuqiang Li, Wei Xia, Xin Zhang, Qingmin Tang, Zhongxiang Ren, Xiangang Xu. Influence of the upper waveguide layer thickness on optical field in asymmetric heterostructure quantum well laser diode[J]. Chinese Optics Letters, 2010, 8(5): 493.