本文研究了工作波长为980nm的InGaAs/AsGaAs大功率红外量子阱F–P腔激光器在接近1A的大电流调制下的特性。在大信号调制 下，通过数值求解，对大功率半导体激光器的参数进行了比较。随着调制深度m的增加，激光峰值不断变窄和变尖锐，而且调制频率不断减小。 还比较了脉冲和正弦调制信号的输出波形，二者的波形在同频率下相似。输出光功率由于大信号瞬态响应而发生波形变形，产生啁啾效应。调 制脉冲电流越大，啁啾越大，大小在nm数量级。

The characteristics of an InGaAs/AsGaAs high power infrared quantum well F-P cavity laser in large current (close to 1A) modulation at the wavelength of 980nm is studied. In the large signal modulation, the parameters of a high power semiconductor laser is compared through numerical solution. With the increase of the modulation depth m, the laser peak becomes narrower and sharper and the modulation frequency is decreased. The comparison of the pulse shape with the wave shape of the sine-wave modulation signal shows that both shapes are similar at the same frequency. Due to the transient response of the large signal, distortion can occur for the wave shape of the output optical power and the chirp effect can be generated. The higher the current of the modulation pulse is, the greater (in a nm magnitude) the chirp is.