本文提出了一种利用激光照射高阻硅来控制硅片中THz 波传输特性的方法。利用波长为808nm 的激光照射高阻硅产生光生电导来控制硅片对THz 波的吸收系数,进而控制硅片中THz 波的传输特性,并测量了在光强为1.9W/cm2 的激光照射下硅片对THz 波的透射特性。在1.9W/cm2 的激光照射下0.07cm 硅片的THz 波透射量减少了20% 。实验证明,利用激光控制硅片中的THz 波传输是可行的。

A method to control the transmission characteristics of the THz wave in a silicon wafer by using a laser to irradiate the surface of a high resista时e silicon (H-Si) wafer is presented. First, the laser at the wavelength of 808nm is used to irradiate the H-Si wafer so as to let it generate the photoinduced conductance. Then, the photoinduced conductance is used to control the absorption coefficient of the THz wave and hence to control the transmission characteristics of the THz wave in the silicon wafer. The transmission characteristics of the THz wave in the silicon wafer is meru弓ured when it is irradiated by the laser with a light intensity of 1.9W /cm2. Under the irradiation by the laser with a lightt intensity of 1.9W /cm2 , the transmission of the THz wave in the 0.07cm silicon wafer is reduced by 20%. Theexperiment shows that it is fea启ible to control the transmission of the THz wave in a silicon wafer by using a laser.