研究了MoO3阳极缓冲层对基于CuPc/C60异质结的有机小分子太阳电池器件性能的影响。发现：MoO3阳极缓冲层略微降低了器件的短路电流、开路电压及能量转换效率；MoO3阳极缓冲层提高了器件的整流比；具有MoO3阳极缓冲层的器件在持续光照条件下连续工作20 min，其主要性能参数(如短路电流、开路电压、填充因子及能量转换效率)无明显衰减，而没有MoO3阳极缓冲层的对比器件在相同条件下连续工作20 min，其能量转换效率衰减了大约45%。研究结果表明：MoO3阳极缓冲层明显提高了基于CuPc/C60异质结的有机小分子太阳电池器件的稳定性，可能的原因主要是MoO3阳极缓冲层改善了ITO阳极和CuPc界面，抑制了因持续光照连续工作引起的界面老化，从而提高了器件的稳定性。

Organic solar cells (OSCs) have attracted considerable attention due to their potential for low-cost and large-area solar energy conversion. A lot of work has been undertaken on the electrode buffer layer, which could improve the interface between the electrode and the organic active materials, block exciton to prevent exciton quench at the interface and increase the charge collection, leading to enhanced performance of the OSCs. In this article, the effect of molybdenum oxide (MoO3) buffer layer on the performance of the OSCs with a heterojunction of CuPc/C60 was investigated. It was found that the OSCs, with a 10 nm thick MoO3 anode buffer layer, showed a little smaller short current, open voltage and power conversion efficiency compared to the control devices without the MoO3 anode buffer layer. However, the stability of the devices with a 10 nm thick MoO3 anode buffer layer is significantly improved: under uninterrupted illumination, the fill factor, open voltage, and power conversion efficiency of the device without MoO3 buffer layer decreases 45% during 20 minute continuous operating, while the fill factor, open voltage, and power conversion efficiency of the device with a 10 nm MoO3 anode buffer layer keeps nearly constant, which is attributed to the suppression of the degradation of the interface between ITO and CuPc caused by the uninterrupted illumination, by inducing a MoO3 buffer layer into the interface.