用低压反应离子镀(RLVIP)的方法在Ge基底上制备了Ge_1－xC_x单层非均匀增透薄膜。随着沉积速率在0．05～0．4nm／s之间的变化，其折射率在2．31～3．42之间可变。实验结果表明，镀制的Ge_1－xC_x单层非均匀增透保护薄膜均为无定形结构，并实现了从2000～8000nm的宽波段增透。当沉积速率为0．1nm／s时，单面平均透过率从68．6%提高到了80．9%，比单面未镀膜时提高了17．9%。通过对薄膜的稳定性和牢固度进行测试表明，制备的Ge_1－xC_x单层非均匀增透薄膜具有良好的性能。

Single layer inhomogeneous Ge_1-xC_x antireflection coating is fabricated by RLVIP(Reactive low voltage ion plating) technique on Ge substrate. With deposition rate varying between 0.05～0.4nm/s,the refractive index of prepared coating is in the range of 2.31～3.42.Experimental results indicate that all fabricated single layer inhomogeneous antireflection coatings are amorphous structure,and achieves antireflection of wide optical wavelength range between 2000～8000nm. At deposition rate of 0.lnm/s,average transmittance of single side improves from 68.6% to 80.9% ,comparing to uncoated single side,it increases 17.9%. Measurements of stability and firmness indicate that the prepared single layer inhomogeneous Ge_1-xC_X antireflection coating has good performance.