将硅(Si)衬底上外延生长的氮化镓(GaN)基LED薄膜,通过电镀的方法转移到铜支撑基板、铜铬支撑基板以及通过压焊的方法转移到新的硅支撑基板,获得了垂直结构蓝光LED器件,并对其老化特性进行了对比研究。研究结果表明,在三种基板中铜支撑基板的器件老化后光电特性最稳定。把这一现象归结于三种样品的应力状态以及基板热导率的不同,其中应力状态可能是影响器件可靠性的最主要因素。

GaN-based light-emitting diodes (LED) thin films were successfully transferred from the original Si(111) substrate to Si substrate via bonding,copper substrate and copper-chromium substrate via electroplating respectively,and then the vertical-structure LED were fabricated. The aging characteristic of those LED was investigated. The result indicated that the devices of copper substrate have the most stable photoelectric properties. These different performances were attributed to the different stress states and thermal conductivities,and it was possible that the main influencing factor of reliability of LED was the stress state of the device.