激光与光电子学进展, 2010, 47 (7): 073201, 网络出版: 2010-06-21
半导体中电子自旋动力学的研究 下载: 1186次
Research on Electron Spin Dynamics in Semiconductor
半导体 电子自旋弛豫 时间分辨抽运探测 DP机制 semiconductor electron spin relaxation time resolved pump-probe spectroscopy DP mechanism
摘要
利用飞秒时间分辨圆偏振光抽运探测饱和吸收技术,研究了典型的Ⅲ-Ⅴ族半导体InP和Ⅱ-Ⅵ族半导体CdTe的电子自旋弛豫动力学过程。实验结果表明,CdTe的自旋弛豫过程比InP快,只有几个皮秒。随着激发光子能量的增加,自旋弛豫时间常数单调减小;但是随着载流子浓度的增加,自旋弛豫时间常数先增加到达最大值后再减小。这一实验结果和考虑库仑相互作用的全微观动力学自旋布洛赫方程的理论预言一致。
Abstract
The electron spin dynamics of Ⅲ-Ⅴsemiconductor InP and Ⅱ-Ⅵ semiconductor CdTe are studied by using femtosecond time resolved circularly polarized pump probe spectroscopy. Experimental results show that the spin relaxation time in CdTe with a few picoseconds is faster than that in InP. With the increase of the excitation photon energy,the spin relaxation time constant decreases monotonically. However,with increasing the carrier concentration,the spin relaxation time constant first increases,reaches a maximum and then decreases. This result coincides with theoretical prediction based on the microscopic kinetic spin Bloch equations in which Coulomb interaction is considered.
马红, 金钻明, 马国宏. 半导体中电子自旋动力学的研究[J]. 激光与光电子学进展, 2010, 47(7): 073201. Ma Hong, Jin Zuanming, Ma Guohong. Research on Electron Spin Dynamics in Semiconductor[J]. Laser & Optoelectronics Progress, 2010, 47(7): 073201.