实验过程中制备了3种不同周期的有机阱结构器件, 分别用N,N’-diphenyl-N,N’-bis(1-napthyl)-1,1’-biphenyll-4,4’-diamine(NPB)和4,4,N,N’-dicarbazolebiphenyl(CBP)作为电子的势阱和势垒。 讨论了3个器件在反向偏压调制下的光致发光的猝灭。 研究结果显示在作者所制备的器件中NPB层中激子的猝灭速度要比CBP层中的激子猝灭速度快。 这主要是因为NPB层中的有效电场要比CBP层中的有效电场强。 当所制备的有机阱结构器件的周期数增加时, 在相同的反向电场下, NPB和CBP层中的激子猝灭速度会随之增加, 因为实验中制备的这3个器件为Ⅱ型量子阱结构, 激子在这种阱结构器件中会随着阱周期数的增加而变得越来越不稳定, 因此周期数较大的器件猝灭现象比较明显。

Three organic devices with different quantum well period were fabricated. The potential barrier layer and well layer for electrons were made of N,N’-diphenyl-N,N’-bis(1-napthyl)-1,1’-biphenyl l-4,4’-diamine(NPB) and 4,4,N,N’-dicarbazolebiphenyl(CBP). The photoluminescence quenching of these three devices under changed reverse voltages were studied. Results showed that photoluminescence quenching of NPB layer occurs more quickly than that of CBP layer in the authors’ devices. This is because that the effective electric field in NPB layer is higher than that in CBP layer. The excitons in NPB and CBP layer were easily to be dissociated when the quantum well period increased under the same reverse voltage. Since these three devices are type Ⅱ quantum well structure, the excitons in these devices are not very stable.