报道了芯片尺寸为500 μm×500 μm 硅衬底GaN基蓝光LED在常温下经1 000 h加速老化后的电学和发光性能，其光功率随老化时间的变化分先升后降两个阶段；老化后的反向漏电流和正向小电压下的电流均有明显的增加；老化后器件的外量子效率(EQE)比老化前低；老化前后EQE衰减幅度在不同的注入电流下存在明显差异，衰减幅度最小处出现在发光效率最高时对应的电流密度区间。

The electrical and optical aging characteristics of GaN-based light-emitting diodes on Si substrate were studied. The LED samples were stressed at room temperature with an injection current of 200 mA. Light-output power increases in the first stage and decreases with aging time. The current-voltage characteristics were also analyzed. Reverse current and forward current at low bias were increased significantly. The external quantum efficiency (EQE) of device after aging is lower than the pre-aging one. The EQE attenuation before and after aging are significantly different at different injection currents. The smallest attenuation occurs in the current density range corresponding to the highest efficiency.