从理论上研究了电子-声子相互作用对Morse势阱中光整流效应的影响。利用微扰论的方法求解在考虑电子-声子相互作用时Morse量子阱的波函数和能级, 采用密度矩阵方法和迭代法得到光整流系数，以典型的GaAs/AlGaAs Morse 势阱为例进行数值计算。数值结果表明在考虑电子-声子相互作用后， 获得的光整流系数比仅考虑电子情况的大15%～30%左右。并且电子-声子相互作用使光整流系数峰值向高能方向偏移。因此要得到比较精确的结果， 有必要考虑电子-声子相互作用的影响。

The effects of electron-phonon interaction on the optical rectification (OR) is theoretically studied for electrons confined in Morse quantum wells. The wave functions and energy levels are described by perturbation theory when considering the electron-phonon interaction, and analytic expression for the optical rectification is obtained by the compact density method and iterative procedure. The numerical results for typical GaAs/AlGaAs material show that the optical rectification with considering electron-phonon interaction is over 15%～30% greater than the one without considering electron-phonon interaction. Furthermore, the correction of electron-phonon interaction effect on energies of the electron makes the peak shift to the aspect of the high energy.