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ITO对新型AlGaInP红光LED特性的影响

Effects of ITO on Proprieties of Novel AlGaInP Red LED

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摘要

用真空电子束蒸镀的方法制备氧化铟锡(indium tin oxide,ITO)薄膜,制作了以300 nm ITO为窗口层的新型AlGaInP红光LED。在氮气环境下,对LED样品进行了40 s快速热退火处理。随着退火温度增加,LED的光强先上升后下降,电压先下降后上升,并且两者都在435 ℃达到最优值。通过霍尔测试研究退火对ITO薄膜电学特性的影响,发现这是由于ITO在经过435 ℃退火后,电阻率最小,载流子浓度最大,因而减小了ITO的体电阻和p型欧姆接触电阻,降低了LED工作电压,同时增加了ITO做为电流扩展层的电流扩展效果,提高了LED光强。

Abstract

Indium tin oxide(ITO) film is fabricated with vacuum electron-beam evaporation.A novel AlGaInP light-emitting diode (LED) with a 300 nm thickness transparent conducting indium tin oxide film as window layer is fabricated.LED chip was annealed rapidly in N2 atmosphere for 40 s .As the rapid thermal annealing (RTA) temperature increases,the luminous intensity increases at the beginning and then decreases while the voltage first decreases and then increases.And the optimal annealing temperature for the luminous intensity and voltage is 435 ℃.The result from Hall test of ITO film showed that the carrier concentration is the highest and the resistivity is the lowest when ITO is annealed in a RTA system at 435 ℃.The forward voltage of LED decreases due to the resistance of ITO and the Ohmic contact resistance decreased and the light output increases due to the better current-spreading effect of ITO as current-spreading layer

Newport宣传-MKS新实验室计划
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中图分类号:O484

DOI:10.3788/aos20103008.2401

所属栏目:光学器件

基金项目:国家863计划(2008AA03Z402,2009AA03A1A3)资助课题。

收稿日期:2009-08-11

修改稿日期:2009-11-12

网络出版日期:0001-01-01

作者单位    点击查看

张勇辉:北京工业大学 光电子技术实验室,北京 100124
郭伟玲:北京工业大学 光电子技术实验室,北京 100124
秦园:北京工业大学 光电子技术实验室,北京 100124
李瑞:北京工业大学 光电子技术实验室,北京 100124
丁天平:北京工业大学 光电子技术实验室,北京 100124
沈光地:北京工业大学 光电子技术实验室,北京 100124

联系人作者:张勇辉(kicwenj@emails.bjut.deu.cn)

备注:张勇辉|主要从事半导体光电子器件方面的研究|(1983-),男,硕士研究生。

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引用该论文

Zhang Yonghui,Guo Weiling,Qin Yuan,Li Rui,Ding Tianping,Sheng Guangdi. Effects of ITO on Proprieties of Novel AlGaInP Red LED[J]. Acta Optica Sinica, 2010, 30(8): 2401-2405

张勇辉,郭伟玲,秦园,李瑞,丁天平,沈光地. ITO对新型AlGaInP红光LED特性的影响[J]. 光学学报, 2010, 30(8): 2401-2405

被引情况

【1】吴才川,刘斌,谢自力,修向前,陈鹏,韩平,张荣,孔月婵,陈辰. 新型电极材料石墨烯在LED中的应用. 激光与光电子学进展, 2013, 50(8): 80018--1

【2】蔡昕旸,王新伟,李如雪,王登魁,方铉,房丹,张玉苹,孙秀平,王晓华,魏志鹏. ITO薄膜表面等离子体共振波长的可控调节. 激光与光电子学进展, 2018, 55(5): 51602--1

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