中国激光, 2010, 37 (9): 2190, 网络出版: 2010-08-19
中国半导体激光器的历次突破与发展 下载: 657次
Breakthroughs and Developments of Semiconductor Laser in China
摘要
主要从半导体激光器第一、二、三次飞跃详尽介绍分析了中国半导体激光器的重大突破与发展。
Abstract
Against the background of the first,second and third leaps in the field of semiconductor lasers,a thorough account and analysis is given on the major breakthroughs and developments of the semiconductor lasers in China.
王启明. 中国半导体激光器的历次突破与发展[J]. 中国激光, 2010, 37(9): 2190. Wang Qiming. Breakthroughs and Developments of Semiconductor Laser in China[J]. Chinese Journal of Lasers, 2010, 37(9): 2190.