研究了低能电子束辐照（LEEBI）对大功率GaN基蓝光LED性能的影响。利用实验室提供的电子束模拟空间电子辐射，对蓝光LED进行LEEBI，并对比未辐照的LED，研究其电学性质和光学性质的变化。结果表明，在电子束辐照下，LED发光强度提高，正向电压变小，击穿电压变小。同时利用电子束辐照机理对实验结果进行了分析和讨论。

The influence of low energy electron beam irradiation (LEEBI) on GaN-based blue LED of high power has been studied. Making use of the electron beam from the lab to simulate the space electron irradiation, We take LEEBI on blue LED, and make contrast to unirradiated LED. The changes of electrical and optical properties are studied. It′s found that the higher lighting intensity but lower forward and breakdown voltage can be obtained on irradiated LED. The experimental result has been analyzed and discussed through the mechanism of electron beam irradiation.