通过数值求解半导体方程组仿真了高功率微波脉冲作用下的PIN二极管, 研究了高功率微波脉冲的脉冲宽度对其烧毁的影响。发现脉冲宽度在ns至μs量级时, 脉冲功率随脉冲宽度上升而下降, 并且近似成反比。在此基础上, 基于PIN二极管的Leenov模型和电路的戴维南定理对其机理进行了分析。在脉冲宽度由ns向μs量级变化中, 器件热效应由绝热加热转为有热传导的加热；与此同时, 其实际吸收功率由与入射功率成正比转为与入射功率开方成正比；此二者共同作用导致了脉冲宽度对烧毁影响。

The PIN diode under high power microwave is simulated by solving the semiconductor equations numerically. The influence of pulse width on the diode’s bwronout is studied. The results show that the pulse power for burnout is nearly inversely proportional to the pulse width, if the pulse width is between several nanoseconds and microseconds. This phenomenon is also analyzed on the basis of Leenov’s model and Thevinen’s theorem. If the pulse width is changed from nanoseconds to microseconds, the thermal effect of the device changes from thermal insulation to thermal conduction and the absorbed power changes from proportional to the incident power to proportion to its square root, both of which lead to the influence of the pulse width.